A. Emara

Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures

Philip Barletta, Erkan Acar Berkman, Baxter Moody et al. · Applied Physics Letters · 2007 · 66 citations

Optical Materials, Engineering, Optoelectronic Devices +16

Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365–500nm spectral range

Erkan Acar Berkman, N. A. El-Masry, A. Emara et al. · Applied Physics Letters · 2008 · 26 citations

Engineering, Optoelectronic Devices, Integrated Circuits +19

Structural perfection of InGaN layers and its relation to photoluminescence

Z. Liliental‐Weber, K. M. Yu, M. Hawkridge et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2009 · 18 citations

Optical Materials, Engineering, Optoelectronic Devices +19

Magnetic and magnetotransport properties of (AlGaN∕GaN):Mg∕(GaMnN) heterostructures at room temperature

Amr M. Mahros, M. Oliver Luen, A. Emara et al. · Applied Physics Letters · 2007 · 16 citations

Magnetic Properties, Engineering, Magnetic Materials +19

Spontaneous stratification of InGaN layers and its influence on optical properties

Z. Liliental‐Weber, K. M. Yu, M. Hawkridge et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2009 · 12 citations

Optical Materials, Engineering, Rutherford Back Scattering +17