K. Eisele

1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxy

H. Ennen, Gernot S. Pomrenke, A. Axmann et al. · Applied Physics Letters · 1985 · 347 citations

Engineering, Materials Engineering, Materials Science +17

SF 6, a Preferable Etchant for Plasma Etching Silicon

K. Eisele · Journal of The Electrochemical Society · 1981 · 87 citations

Engineering, Materials Engineering, Materials Science +17

Balanced transistor amplifiers for precise wideband microwave applications

K. Eisele, Rainer Engelbrecht, Kazuya Kurokawa · 1965 · 48 citations

Engineering, Electrical Engineering, Microelectronics +13

Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQW ridge-waveguide lasers

J.D. Ralston, S. Weisser, K. Eisele et al. · IEEE Photonics Technology Letters · 1994 · 41 citations

Engineering, Electrical Engineering, Materials Science +17

Chemical analysis of a Cl2/BCl3/IBr3 chemically assisted ion-beam etching process for GaAs and InP laser-mirror fabrication under cryo-pumped ultrahigh vacuum conditions

J. Daleiden, K. Eisele, R. E. Sah et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 13 citations

Engineering, Materials Engineering, Materials Science +17