Patrick Kae-Nune

Surface reaction probabilities and kinetics of H, SiH3, Si2H5, CH3, and C2H5 during deposition of a-Si:H and a-C:H from H2, SiH4, and CH4 discharges

J. Perrin, Masaharu Shiratani, Patrick Kae-Nune et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1998 · 230 citations

Engineering, Surface Reaction Probabilities, Chemistry +19

Mass spectrometry detection of radicals in SiH₄-CH₄-H₂glow discharge plasmas

Patrick Kae-Nune, J. Perrin, Jean Guillon et al. · Plasma Sources Science and Technology · 1995 · 104 citations

Radical Emission, Engineering, Mass Spectrometry Detection +17

Surface recombination probabilities of H on stainless steel, a-Si:H and oxidized silicon determined by threshold ionization mass spectrometry in H2 RF discharges

Patrick Kae-Nune, J. Perrin, J. Jolly et al. · Surface Science · 1996 · 74 citations

Chemical Engineering, Surface Recombination Probabilities, Engineering +10

Mass Spectrometry Detection of SiH_m and CH_m Radicals from SiH₄–CH₄–H₂ RF Discharges under High Temperature Deposition Conditions of Silicon Carbide

Patrick Kae-Nune, J. Perrin, Jean Guillon et al. · Japanese Journal of Applied Physics · 1994 · 46 citations

Engineering, Mass Spectrometry Detection, Silicon Carbide +18