M. Ashman

A 50nm MHEMT millimeter-wave MMIC LNA with wideband noise and gain performance

P.M. Smith, M. Ashman, D. Xu et al. · 2014 · 36 citations

Engineering, Electrical Engineering, Microelectronics +16

0.1-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> Atomic Layer Deposition Al<sub>2</sub>O<sub>3</sub> Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifiers

D. Xu, Kuo-Hsiung Chu, José Díaz et al. · IEEE Electron Device Letters · 2015 · 34 citations

Engineering, Electrical Engineering, Materials Science +17

0.1-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math> </inline-formula> InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71–76 and 81–86 GHz: Impact of Passivation and Gate Recess

D. Xu, Kanin Chu, José Díaz et al. · IEEE Transactions on Electron Devices · 2016 · 15 citations

Engineering, Electrical Engineering, Materials Science +17