Spin-transfer torque RAM technology: Review and prospect

T. Kawahara, Keita Ito, R. Takemura, +1

Microelectronics Reliability

MagnetismElectrical EngineeringSpintronicsEngineeringMagnetic Resonance +2

Single-Shot Time-Resolved Measurements of Nanosecond-Scale Spin-Transfer Induced Switching: Stochastic Versus Deterministic Aspects

T. Devolder, J. Hayakawa, Keita Ito, +7

Physical Review Letters

EngineeringMagnetic ResonanceNanocomputingSpin DynamicSpin Phenomenon +17

2Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read

T. Kawahara, R. Takemura, K. Miura, +11

Non-volatile MemoryArray SchemeEngineeringParallelizing-direction Current ReadEmerging Memory Technology +16

Current-driven microwave oscillations in current perpendicular-to-plane spin-valve nanopillars

Q. Mistral, Joo-Von Kim, T. Devolder, +5

Applied Physics Letters

A multi-level-cell spin-transfer torque memory with series-stacked magnetotunnel junctions

Takashi Ishigaki, T. Kawahara, R. Takemura, +4

Series-stacked Magnetotunnel JunctionsMagnetismSpintronicsElectrical EngineeringEngineering +12

Anomaly in entropy change between parent and martensite phases in the Ni50Mn34In16 Heusler alloy

Rie Y. Umetsu, Wataru Ito, Keita Ito, +6

Scripta Materialia

Materials ScienceMartensite PhasesEngineeringPhysicsCondensed Matter Physics +6

Large Tunneling Anisotropic Magnetoresistance in (Ga,Mn)As Nanoconstrictions

A. D. Giddings, M. N. Khalid, T. Jungwirth, +10

Physical Review Letters

Current-Induced Magnetization Switching in MgO Barrier Magnetic Tunnel Junctions With CoFeB-Based Synthetic Ferrimagnetic Free Layers

Jun Hayakawa, Shoji Ikeda, K. Miura, +12

IEEE Transactions on Magnetics

Magnetic PropertiesEngineeringSyf Free LayerSpintronic MaterialMagnetic Materials +17

Perpendicular magnetic anisotropy of Mn4N films on MgO(001) and SrTiO3(001) substrates

Yoko Yasutomi, Keita Ito, Tatsunori Sanai, +2

Journal of Applied Physics

Magnetic PropertiesPerpendicular Magnetic AnisotropyEngineeringMagnetic MaterialsMagnetoresistance +15

Spin polarization of Fe4N thin films determined by point-contact Andreev reflection

Akari Narahara, Keita Ito, Takashi Suemasu, +3

Applied Physics Letters

Magnetic PropertiesEngineeringMagnetic ResonancePoint-contact Andreev ReflectionSpintronic Material +20