Ralph-Stephan Unger - Concepedia

Author

Ralph-Stephan Unger

Ferdinand-Braun-Institut

Also Known As

R. Unger, R.-S. Unger, Ralph-Stephan Unger, Unger, Ralph-Stephan

Publications

255

Citations

H-Index

Concepts

All Affiliations

Ferdinand-Braun-Institut Leibniz Institute for Crystal Growth Humboldt-Universität zu Berlin Technische Universität Berlin Kirchhoff (Germany)

About

Ralph-Stephan Unger is an author at Ferdinand-Braun-Institut specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	183
2	Applied Physics	7	7	183
3	Electrical Engineering	4	4	103
4	Materials Science	3	3	51
5	Materials Engineering	1	1	18

Ralph-Stephan Unger

Publications

227

Citations

H-Index

Page 1

	Year	Citations
Optically Coherent Nitrogen-Vacancy Defect Centers in Diamond Nanostructures Laura Orphal‐Kobin, Kilian Unterguggenberger, Tommaso Pregnolato, Physical Review X	2023	44
DFB Laser Diodes Based on GaN Using 10th Order Laterally Coupled Surface Gratings Ji Hye Kang, H. Wenzel, Veit Hoffmann, IEEE Photonics Technology Letters Short Wavelength OpticOptical MaterialsEngineeringDfb Laser DiodesLaser Science	2017	37
SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes Kornelius Tetzner, Kingsley Egbo, Michael Klupsch, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesVertical P–n Diodes	2022	33
Vertical and Smooth Single-Step Reactive Ion Etching Process for InP Membrane Waveguides Yuqing Jiao, T. de Vries, Ralph-Stephan Unger, Journal of The Electrochemical Society Rie Process ResultsEngineeringMicrofabricationApplied PhysicsSingle-step Rie Process	2015	32
Enhancement-mode vertical (100) β-Ga<sub>2</sub>O<sub>3</sub> FinFETs with an average breakdown strength of 2.7 MV cm<sup>−1</sup> Kornelius Tetzner, Michael Klupsch, Andreas Popp, Japanese Journal of Applied Physics Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringAverage Breakdown Strength	2023	30
Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High‐Temperature Annealing for UVC Light‐Emitting Diodes Sylvia Hagedorn, Sebastian Walde, Norman Susilo, physica status solidi (a) Materials ScienceAln GrowthElectrical EngineeringUnexpectedly Thin‐layer ThicknessEngineering	2020	22
Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N Mickael Lapeyrade, Sabine Alamé, Johannes Glaab, Journal of Applied Physics Aluminium NitrideSi-doped Al0.75ga0.25nEngineeringVacuum DeviceIi-vi Semiconductor	2017	18
Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN Anna Mogilatenko, A. Knauer, U. Zeimer, Journal of Crystal Growth Materials ScienceAluminium NitrideEngineeringCrystalline DefectsCrystal Material	2018	11

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