Daniel Foty

A CAD methodology for optimizing transistor current and sizing in analog CMOS design

D.M. Binkley, C.E. Hopper, Steven Daniel Tucker et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 2003 · 121 citations

Engineering, Electrical Engineering, Analog Electronics +16

Impurity ionization in MOSFETs at very low temperatures

Daniel Foty · Cryogenics · 1990 · 92 citations

Engineering, Computer Engineering, Electrical Engineering +13

Numerical analysis of the precursor fields in linear dispersive pulse propagation

Philippe Wyns, Daniel Foty, Kurt E. Oughstun · Journal of the Optical Society of America A · 1989 · 53 citations

Engineering, Electrical Engineering, Computational Electromagnetics +14

Design-oriented characterization of CMOS over the continuum of inversion level and channel length

D.M. Binkley, Matthias Bucher, Daniel Foty · 2002 · 48 citations

Engineering, Electrical Engineering, Analog Electronics +15

Comparison of a BSIM3V3 and EKV MOSFET model for a 0.5 /spl mu/m CMOS process and implications for analog circuit design

S.C. Terry, J.M. Rochelle, D.M. Binkley et al. · IEEE Transactions on Nuclear Science · 2003 · 39 citations · Full text

Engineering, Electrical Engineering, Analog Electronics +16