J. W. Lee

Etch characteristics of GaN using inductively coupled Cl2/Ar and Cl2/BCl3 plasmas

Y. H. Lee, H. S. Kim, G.Y. Yeom et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1998 · 61 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +15

The incorporation of hydrogen into III-V nitrides during processing

S. J. Pearton, R. J. Shul, R. G. Wilson et al. · Journal of Electronic Materials · 1996 · 33 citations

Iii-v Nitrides, Chemical Engineering, Engineering +5

Study of ferroelectric and reproducible bistable switching properties in CdMnS thin films for nonvolatile memory applications

J. C. Lee, N. Ganapathi Subramaniam, J. W. Lee et al. · Applied Physics Letters · 2007 · 29 citations

Materials Science, Non-volatile Memory, Electrical Engineering +10

Electron and hole injection in metal-oxide-nitride-oxide-silicon structures

K. A. Nasyrov, S. S. Shaĭmeev, V. A. Gritsenko et al. · Journal of Experimental and Theoretical Physics · 2006 · 22 citations

Magnetized inductively coupled plasma etching of GaN in Cl2/BCl3 plasmas

Y. H. Lee, Youngje Sung, G.Y. Yeom et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2000 · 14 citations

Materials Science, Magnetism, Electrical Engineering +11