Band-edge and deep level photoluminescence of pseudomorphic Si1−<i>x</i>−<i>y</i>Ge<i>x</i>C<i>y</i> alloys

P. Boucaud, Colin G. Francis, F. H. Julien, +5

Applied Physics Letters

Optical MaterialsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors +14

High density platinum nanocrystals for non-volatile memory applications

J. Dufourcq, S. Bodnar, Guillaume Gay, +8

Applied Physics Letters

Materials ScienceNanoscale ScienceEngineeringElectron MicroscopyNanomaterials +13

Selective Si and SiGe epitaxial heterostructures grown using an industrial low-pressure chemical vapor deposition module

S. Bodnar, E. de Berranger, Pierre Bouillon, +3

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Selective SiSige Epitaxial HeterostructuresElectrical EngineeringSemiconductor TechnologyEngineering +12

Photoluminescence of strained Si1−<i>y</i>C<i>y</i> alloys grown at low temperature

P. Boucaud, Colin G. Francis, A. Larré, +5

Applied Physics Letters

EngineeringOptoelectronic DevicesDeep Level BroadbandSilicon On InsulatorSemiconductor Nanostructures +14

Strain compensated heterostructures in the Si1−<i>x</i>−<i>y</i>Ge<i>x</i>C<i>y</i> ternary system

J.L. Regolini, S. Bodnar, J.C. Oberlin, +4

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

SemiconductorsMaterials ScienceEngineeringPhysicsCrystalline Defects +11

Impact of electronic defects on the Raman spectra from electrodeposited Cu(In,Ga)Se2 solar cells: Application for non-destructive defect assessment

Carmen M. Ruiz, Xavier Fontané, Andrew Fairbrother, +5

Applied Physics Letters

Materials ScienceIi-vi SemiconductorElectrical EngineeringSurface CharacterizationPoint Defects +12

Growth of ternary alloy Si1−<i>x</i>−<i>y</i>Ge<i>x</i>C<i>y</i> by rapid thermal chemical vapor deposition

S. Bodnar, J.L. Regolini

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Materials ScienceMaterials EngineeringTernary Alloy SigecEngineeringSigec Layers +10

Statistical Process Control for Cu(In,Ga)(S,Se)2 electrodeposition-based manufacturing process of 60×120cm2 modules up to 14,0% efficiency

C. Broussillou, C. Viscogliosi, A. Rogee, +9

EngineeringCompany NexcisVacuum DeviceChemical DepositionCigs Production Line +17

Formation mechanisms of Cu(In,Ga)Se2 solar cells prepared from electrodeposited precursors

Florian Oliva, C. Broussillou, M. Annibaliano, +5

Thin Solid Films

Materials ScienceChemical EngineeringEngineeringSurface ElectrochemistrySe2 Solar Cells +3

Sulfurization of Cu–In electrodeposited precursors for CuInS2-based solar cells

C. Broussillou, M. Andrieux, M. Herbst‐Ghysel, +4

Solar Energy Materials and Solar Cells

EngineeringCuins2-based Solar CellsChemistryElectrochemical CellElectrochemical Process +2