Ken‐ichi Onisawa

Change in crystalline morphologies of polycrystalline silicon films prepared by radio-frequency plasma-enhanced chemical vapor deposition using SiF4+H2 gas mixture at 350 °C

Toshiki Kaneko, Masatoshi Wakagi, Ken‐ichi Onisawa et al. · Applied Physics Letters · 1994 · 127 citations

Natural Sciences, Materials Engineering, Materials Science +17

Transferred Charge in the Active Layer and EL Device Characteristics of TFEL Cells

Yoshimasa A. Ono, Hideaki Kawakami, M. Fuyama et al. · Japanese Journal of Applied Physics · 1987 · 90 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Crystalline Fraction of Microcrystalline Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using Pulsed Silane Flow

Toshiki Kaneko, Ken‐ichi Onisawa, Masatoshi Wakagi et al. · Japanese Journal of Applied Physics · 1993 · 61 citations

Natural Sciences, Materials Engineering, Materials Science +17

Dielectric properties of rf-sputtered Y2O3 thin films

Ken‐ichi Onisawa, M. Fuyama, Katsumi Tamura et al. · Journal of Applied Physics · 1990 · 52 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Structural Change during Annealing of Amorphous Indium-Tin Oxide Films Deposited by Sputtering with H₂O Addition

Etsuko Nishimura, Masahiko Ando, Ken‐ichi Onisawa et al. · Japanese Journal of Applied Physics · 1996 · 38 citations

Natural Sciences, Materials Science, Physics +17