Bronislovas Čechavičius

Multi‐quantum well Ga(AsBi)/GaAs laser diodes with more than 6% of bismuth

Renata Butkutė, Andrejus Geižutis, V. Pačebutas et al. · Electronics Letters · 2014 · 63 citations

Qw Structures, Engineering, Laser Applications +16

Effects of proton irradiation on luminescence emission and carrier dynamics of self-assembled III-V quantum dots

R. León, S. Marcinkecius, J. Siegert et al. · IEEE Transactions on Nuclear Science · 2002 · 38 citations

Ii-vi Semiconductor, Electrical Engineering, Photoluminescence +14

Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells

Renata Butkutė, Gediminas Niaura, Evelina Pozingytė et al. · Nanoscale Research Letters · 2017 · 27 citations · Full text

Optical Materials, Engineering, Optoelectronic Devices +21

Enhancement of photoluminescence of GaAsBi quantum wells by parabolic design of AlGaAs barriers

Simona Pūkienė, Mindaugas Karaliūnas, Algirdas Jasinskas et al. · Nanotechnology · 2019 · 27 citations

Photoreflectance and surface photovoltage spectroscopy of beryllium-doped GaAs∕AlAs multiple quantum wells

Bronislovas Čechavičius, J. Kavaliauskas, G. Krivaitė et al. · Journal of Applied Physics · 2005 · 23 citations · Full text

Thz Photonics, Optical Materials, Terahertz Technology +19