H.-U. Ehrke

Thickness Dependence of Hole Mobility in Ultrathin SiGe-Channel p-MOSFETs

Cáit Ní Chléirigh, N. David Theodore, Hirofumi Fukuyama et al. · IEEE Transactions on Electron Devices · 2008 · 45 citations

Engineering, Electrical Engineering, Materials Science +17

Soft landing of size-selected clusters in rare gas matrices

J. Tobias Lau, W. Würth, H.-U. Ehrke et al. · Low Temperature Physics · 2003 · 27 citations

Natural Sciences, Chemistry, Materials Science +17

Ultrahigh vacuum cluster deposition source for spectroscopy with synchrotron radiation

J. Tobias Lau, A. K. Achleitner, H.-U. Ehrke et al. · Review of Scientific Instruments · 2005 · 25 citations

Natural Sciences, Materials Science, Physics +13

Advanced secondary ion mass spectroscopy quantification in the first few nanometer of B, P, and As ultrashallow implants

A. Merkulov, P. Peres, Si Kying Choi et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2010 · 15 citations

Natural Sciences, Materials Engineering, Materials Science +15

Doubly Excited Rydberg Series in Solid Neon Studied by Electron and Photodesorption Spectroscopies

P. Wiethoff, H.-U. Ehrke, D. Menzel et al. · Physical Review Letters · 1995 · 13 citations

Natural Sciences, Materials Science, Physics +14