Seong‐Wan Ryu

Sub-5nm All-Around Gate FinFET for Ultimate Scaling

Hyunjin Lee, Lee-Eun Yu, Seong‐Wan Ryu et al. · 2006 · 127 citations

Electrical Engineering, Sub Xmlns, Engineering +9

Nonvolatile memory based on sol-gel ZnO thin-film transistors with Ag nanoparticles embedded in the ZnO/gate insulator interface

Dipti Gupta, Manish Anand, Seong‐Wan Ryu et al. · Applied Physics Letters · 2008 · 82 citations

Materials Science, Non-volatile Memory, Electrical Engineering +12

Overcoming the reliability limitation in the ultimately scaled DRAM using silicon migration technique by hydrogen annealing

Seong‐Wan Ryu, Kyung Kyu Min, Jungho Shin et al. · 2017 · 65 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +18

Itinerant Helimagnetic Single-Crystalline MnSi Nanowires

Kwanyong Seo, Hana Yoon, Seong‐Wan Ryu et al. · ACS Nano · 2010 · 39 citations

Polysilicon Channel TFT With Separated Double-Gate for Unified RAM (URAM)—Unified Function for Nonvolatile SONOS Flash and High-Speed Capacitorless 1T-DRAM

Jin‐Woo Han, Seong‐Wan Ryu, Dong-Hyun Kim et al. · IEEE Transactions on Electron Devices · 2010 · 30 citations

Non-volatile Memory, Polysilicon Channel Tft, Engineering +16