Seong‐Wan Ryu - Concepedia

Author

Seong‐Wan Ryu

Korea Advanced Institute of Science and Technology ORCID

Also Known As

S. W. Ryu, S.-W. Ryu, Seong-Wan Ryu, Seong-wan Ryu, Seong‐Wan Ryu, Subhash Ch. Bhattacharya

Publications

681

Citations

H-Index

Concepts

All Affiliations

Korea Advanced Institute of Science and Technology National NanoFab Center SK Group (South Korea)

About

Seong‐Wan Ryu is an author at Korea Advanced Institute of Science and Technology specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	18	565
2	Applied Physics	13	16	518
3	Chemical Engineering	3	3	55
4	Chemistry	2	2	37
5	Natural Sciences	1	1	25

Seong‐Wan Ryu

Publications

614

Citations

H-Index

Page 1

	Year	Citations
Sub-5nm All-Around Gate FinFET for Ultimate Scaling Hyunjin Lee, Lee-Eun Yu, Seong‐Wan Ryu, Electrical EngineeringSub XmlnsEngineeringVlsi DesignTechnology Scaling	2006	127
Nonvolatile memory based on sol-gel ZnO thin-film transistors with Ag nanoparticles embedded in the ZnO/gate insulator interface Dipti Gupta, Manish Anand, Seong‐Wan Ryu, Applied Physics Letters Materials ScienceNon-volatile MemoryElectrical EngineeringEngineeringNanomaterials	2008	82
Overcoming the reliability limitation in the ultimately scaled DRAM using silicon migration technique by hydrogen annealing Seong‐Wan Ryu, Kyung Kyu Min, Jungho Shin, Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureIntegrated Circuits	2017	65
Itinerant Helimagnetic Single-Crystalline MnSi Nanowires Kwanyong Seo, Hana Yoon, Seong‐Wan Ryu, ACS Nano	2010	39
Polysilicon Channel TFT With Separated Double-Gate for Unified RAM (URAM)—Unified Function for Nonvolatile SONOS Flash and High-Speed Capacitorless 1T-DRAM Jin‐Woo Han, Seong‐Wan Ryu, Dong-Hyun Kim, IEEE Transactions on Electron Devices Non-volatile MemoryPolysilicon Channel TftEngineeringEmerging Memory TechnologyComputer Architecture	2010	30
A Bulk FinFET Unified-RAM (URAM) Cell for Multifunctioning NVM and Capacitorless 1T-DRAM Jin‐Woo Han, Seong‐Wan Ryu, Sungho Kim, IEEE Electron Device Letters Non-volatile MemoryElectrical EngineeringEngineeringBulk Finfet Unified-ramNanoelectronics	2008	29
Designed Workfunction Engineering of Double-Stacked Metal Nanocrystals for Nonvolatile Memory Application Seong‐Wan Ryu, Jong‐Won Lee, Jin‐Woo Han, IEEE Transactions on Electron Devices Non-volatile MemoryDeep Potential WellEngineeringNanoelectronicsMemory Device	2009	26
Wet Chemical Needlelike Assemblies of Single-Walled Carbon Nanotubes on a Silicon Surface Xing‐Jiu Huang, Seong‐Wan Ryu, Hyungsoon Im, Langmuir EngineeringMolecular Self-assemblyNanostructured SurfaceChemistrySingle-walled Carbon Nanotubes	2007	25
A Unified-RAM (URAM) Cell for Multi-Functioning Capacitorless DRAM and NVM Jin‐Woo Han, Seong‐Wan Ryu, Chung-Jin Kim, Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureMulti-channel Memory Architecture	2007	25
Gate-Induced Drain-Leakage (GIDL) Programming Method for Soft-Programming-Free Operation in Unified RAM (URAM) Jin-Woo Han, Seong‐Wan Ryu, Sung‐Jin Choi, IEEE Electron Device Letters Non-volatile MemoryEngineeringComputer ArchitectureGate-induced Drain-leakageMulti-channel Memory Architecture	2009	22

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