Overcoming the reliability limitation in the ultimately scaled DRAM using silicon migration technique by hydrogen annealing

Abstract

We demonstrated a highly reliable buried-gate saddle-fin cell-transistor (cell-TR) using silicon migration technique of hydrogen (H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) annealing after a dry etch to form the saddle-fin in a fully integrated 2y-nm 4Gb DRAM. It clearly shows a reduction in interface trap density with highly enhanced variable-retention-time (VRT) and Row-Hammering immunity.