Yoshifumi Nishi

Low-power linear computation using nonlinear ferroelectric tunnel junction memristors

Radu Berdan, Takao Marukame, Kensuke Ota et al. · Nature Electronics · 2020 · 220 citations

Electrical Engineering, Engineering, Low-power Linear Computation +5

Film properties of MoSi₂and their application to self-aligned MoSi₂gate MOSFET

T. Mochizuki, T. Tsujimaru, M. Kashiwagi et al. · IEEE Transactions on Electron Devices · 1980 · 53 citations

Semiconductors, Molybdenum Silicide, Electrical Engineering +15

Origin of the SET Kinetics of the Resistive Switching in Tantalum Oxide Thin Films

Yoshifumi Nishi, Stephan Menzel, K. Fleck et al. · IEEE Electron Device Letters · 2014 · 51 citations

Engineering, Set Kinetics, Set Switching Time +16

Simulation of TaO<inf>x</inf>-based complementary resistive switches by a physics-based memristive model

Anne Siemon, Stephan Menzel, Astrid Marchewka et al. · 2014 · 49 citations

Crs Cells, Crs Behavior, Non-volatile Memory +16

In-memory Reinforcement Learning with Moderately-Stochastic Conductance Switching of Ferroelectric Tunnel Junctions

Radu Berdan, Takao Marukame, Shoichi Kabuyanagi et al. · 2019 · 39 citations

Engineering, In-memory Reinforcement Learning, Efficient Reinforcement Learning +16