A. D. Annis - Concepedia

Author

A. D. Annis

Also Known As

A. Annis, A. D. ANNIS, A. D. Annis, A.D. Annis, Alan Annis

Publications

431

Citations

H-Index

Concepts

All Affiliations

A. D. Annis is an author at Philips (United Kingdom) specializing in applied physics, engineering, and materials science.

#	Concept	H-Index	Publications	Citations
1	Engineering	5	5	228
2	Applied Physics	5	5	228
3	Materials Science	4	4	209
4	Electrical Engineering	3	3	147
5	Natural Sciences	2	2	81

A. D. Annis

Publications

409

Citations

H-Index

Page 1

	Year	Citations
Structural inhibition of ferroelectric switching in triglycine sulphate—I. additives E. T. Keve, K. L. Bye, P. W. Whipps, Ferroelectrics	1972	171
Studies of phases, phase transitions and properties of some plzt ceramics E. T. Keve, A. D. Annis Ferroelectrics Phase TransitionsEngineeringPlzt CeramicsElectrical PropertiesElectric Field	1973	111
Anisotropy of Fe3+ Ions in Yttrium Iron Garnet R. F. Pearson, A. D. Annis Journal of Applied Physics Magnetic PropertiesEngineeringMagnetic ResonanceMagnetic MaterialsMagnetism	1968	43
Photomagnetic Anneal Properties of Silicon-Doped Yttrium Iron Garnet R. F. Pearson, A. D. Annis, P. Kompfner Physical Review Letters Materials ScienceMagnetismFerromagnetismSpintronicsOptical Materials	1968	38
Electronic Properties of a-SiN<sub>x</sub>:H Thin Film Diodes J. M. Shannon, J. N. Sandoe, I. D. French, MRS Proceedings Semiconductor TechnologyElectrical EngineeringEngineeringElectronic MaterialsApplied Physics	1993	19
Electronic effects of ion damage in hydrogenated amorphous silicon alloys R.A.C.M.M. van Swaaij, A. D. Annis, B.J. Sealy, Journal of Applied Physics Optical MaterialsEngineeringSemiconductor MaterialsOptoelectronic DevicesIntegrated Circuits	1997	17
Current-induced defect conductivity in hydrogenated silicon-rich amorphous silicon nitride J. M. Shannon, A. D. Annis Philosophical Magazine Letters	1995	10

Page 1