Photomagnetic Anneal Properties of Silicon-Doped Yttrium Iron Garnet

Abstract

Torque measurements have been made at 4.2\ifmmode^\circ\else\textdegree\fi{}K on crystals of silicon-doped yttrium iron garnet which were irradiated with infrared light. The radiation caused large photomagnetic anneal effects which were found to depend on the plane of polarization of the light.