G. Mulholland

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

X. Ni, Xin‐Ge Li, J. Lee et al. · Applied Physics Letters · 2010 · 88 citations

Engineering, Electrical Engineering, Materials Science +17

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

Xianbo LI, X. Ni, Joon Chok Lee et al. · Applied Physics Letters · 2009 · 58 citations

Engineering, Electrical Engineering, Materials Science +17

On carrier spillover in c- and m-plane InGaN light emitting diodes

J. Lee, X. Li, X. Ni et al. · Applied Physics Letters · 2009 · 44 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN

X. Ni, J. Lee, M. Wu et al. · Applied Physics Letters · 2009 · 24 citations

Engineering, Materials Engineering, Materials Science +17

The effect of ballistic and quasi‐ballistic electrons on the efficiency droop of InGaN light emitting diodes

X. Ni, X. Li, J. Lee et al. · physica status solidi (RRL) - Rapid Research Letters · 2010 · 20 citations

Engineering, Electrical Engineering, Materials Science +16