Bo-Bae Song

A 32nm logic technology featuring 2<sup>nd</sup>-generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm<sup>2</sup> SRAM cell size in a 291Mb array

S. Natarajan, M Armstrong, M. Bost et al. · 2008 · 184 citations

Engineering, Computer Engineering, Electrical Engineering +16

A Novel Dual-Directional SCR Structure With High Holding Voltage for 12-V Applications in 0.13-μm BCD Process

Kyoung-Il Do, Bo-Bae Song, Yong-Seo Koo · IEEE Transactions on Electron Devices · 2020 · 32 citations

Engineering, Electrical Engineering, Microelectronics +15

SCR-Based ESD Protection Using a Penta-Well for 5 V Applications

Bo-Bae Song, Kyoung-Il Do, Yong-Seo Koo · IEEE Journal of the Electron Devices Society · 2018 · 30 citations · Full text

Engineering, Electrical Engineering, Microelectronics +9

A Gate-Grounded NMOS-Based Dual-Directional ESD Protection With High Holding Voltage for 12V Application

Kyoung-Il Do, Bo-Bae Song, Yong-Seo Koo · IEEE Transactions on Device and Materials Reliability · 2020 · 16 citations

Engineering, Electrical Engineering, Hardware Security +10

Low Ron and high robustness ESD protection design for low‐voltage power clamp application

Bo-Bae Song, Yong-Seo Koo · Electronics Letters · 2016 · 11 citations

Engineering, Electrical Engineering, Microelectronics +14