Yoshitaka Nagasato

Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress

Tetsuo Narita, Masakazu Kanechika, Jun Kojima et al. · Scientific Reports · 2022 · 38 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress

Tetsuo Narita, Yoshitaka Nagasato, Masakazu Kanechika et al. · Applied Physics Letters · 2021 · 21 citations

Engineering, Electrical Engineering, Materials Science +17

Low-Temperature Fabrication of Ultrathin ZrO₂/Si Structure Using Metal Deposition Followed by Oxygen Annealing

Yoshitaka Nagasato, Tsutomu Aya, Yoshitaka Iwazaki et al. · Japanese Journal of Applied Physics · 2005 · 20 citations

Natural Sciences, Materials Engineering, Materials Science +17

Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions

T. Shoji, Tetsuo Narita, Yoshitaka Nagasato et al. · Applied Physics Express · 2021 · 20 citations

Engineering, Electrical Engineering, Materials Science +17

Enhanced field-effect mobility (>250 cm²/V·s) in GaN MOSFETs with deposited gate oxides via mist CVD

Kazuki Ikeyama, Hidemoto Tomita, Sayaka Harada et al. · Applied Physics Express · 2024 · 15 citations · Full text

Engineering, Electrical Engineering, Materials Science +17