Takuya Hoshii

1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

Ryo Suzuki, Noriyuki Taoka, Masafumi Yokoyama et al. · Applied Physics Letters · 2012 · 162 citations

Materials Science, Electrical Engineering, Cycle Al2o3 Inter-layer +11

Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering

Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi et al. · Applied Physics Letters · 2021 · 85 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography

Kazuo Tsutsui, T. Matsushita, Kotaro Natori et al. · Nano Letters · 2017 · 70 citations

A possible origin of the large leakage current in ferroelectric Al _{1− <i>x</i>} Sc _<i>x</i> N films

Junji Kataoka, Sung‐Lin Tsai, Takuya Hoshii et al. · Japanese Journal of Applied Physics · 2021 · 59 citations

Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation

Takuya Hoshii, Sunghoon Lee, Rena Suzuki et al. · Journal of Applied Physics · 2012 · 50 citations

Aluminium Nitride, Al2o3/ingaas Metal-oxide-semiconductor Interfaces, Engineering +18