Surface modification with nitrogen-containing plasmas to produce hydrophilic, low-fouling membranes

Kristen R. Kull, M. Steen, Ellen R. Fisher

Journal of Membrane Science

Chemical EngineeringEngineeringSurface ScienceFoulingMembrane Characterization +3

Hydrophilic modification of polymeric membranes by low temperature H2O plasma treatment

M. Steen, Alistair C. Jordan, Ellen R. Fisher

Journal of Membrane Science

Chemical EngineeringMembrane FormationEngineeringMembrane TechnologyPolymer Science +5

Low temperature plasma treatment of asymmetric polysulfone membranes for permanent hydrophilic surface modification

M. Steen, Lynley Hymas, Elizabeth D. Havey, +3

Journal of Membrane Science

Chemical EngineeringMembrane FormationEngineeringMembrane TechnologyPolymer Science +2

Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs

K. Rim, K. Chan, L. Shi, +17

Materials EngineeringUltra-thin Strained SiElectrical EngineeringTensile-strained Si LayerEngineering +10

Investigation of Gas Phase Species and Deposition of SiO₂ Films from HMDSO/O₂ Plasmas

Dattatray S. Wavhal, Jianming Zhang, M. Steen, +1

Plasma Processes and Polymers

Materials ScienceGas Phase SpeciesEngineeringHmdso MonomerOxide Electronics +11

Effect of plasma interactions with low-κ films as a function of porosity, plasma chemistry, and temperature

Marcus A. Worsley, Stacey F. Bent, S. M. Gates, +4

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

EngineeringPlasma InteractionsThin Film Process TechnologyChemistrySilicon On Insulator +18

High-Performance High-¿/Metal Gates for 45nm CMOS and Beyond with Gate-First Processing

M. Chudzik, B. Doris, R. Mo, +34

EngineeringVlsi DesignGate-first ProcessingIntegrated CircuitsSemiconductor Device +14

Role of oxygen vacancies in V/sub BF//V/sub t/ stability of pFET metals on HfO/sub 2/

E. Cartier, F. R. McFeely, Vijay Narayanan, +16

EngineeringOxygen VacanciesOxidation ResistanceSemiconductor DevicePfet Metal Gates +15

Band-Edge High-Performance High-k/Metal Gate n-MOSFETs Using Cap Layers Containing Group IIA and IIIB Elements with Gate-First Processing for 45 nm and Beyond

T. C. Chen, G. Shahidi, Supratik Guha, +23

Iiib ElementsWide-bandgap SemiconductorEngineeringGate-first ProcessingSemiconductor Device +16

Identification of Gas-Phase Reactive Species and Chemical Mechanisms Occurring at Plasma−Polymer Surface Interfaces

M. Steen, Carmen I. Butoi, Ellen R. Fisher

Langmuir

Gas-phase Reactive SpeciesEngineeringResponsive PolymersChemistryChemical Mechanisms Occurring +21