Electronics Letters · 1992 · 25 citations · 1 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsPhotonicsLaser PhysicsQuantum ConfinementQuantum Well DevicesQuantum WellsSemiconductor LasersStrain EngineeringCurrentsLaser ThresholdLasersLow-threshold Current LasersQuantum Well LasersStrained Layer StructuresStrained Quantum WellsWaveguide Lasers
Low threshold 1.3 μm lasers using compressive as well as tensile-strained single AlxGayIn1−x−yAs quantum wells (100 and 188 A/cm2, respectively), are demonstrated. Low threshold currents of 2 mA at 25°C and 14 mA at 100°C are achieved for 3.5 μm wide ridge waveguide lasers using the compressive-strained single quantum well.
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