Molecular Emission of CF4 Gas in Low-pressure Inductively Coupled Plasma

Abstract

<TEX>$CF_4$</TEX> gas is one of the most common chemicals used for dry etching in semiconductor manufacturing processes. For application to the etching process and environmental control, the low-pressure inductively coupled plasma (LP-ICP) was employed to obtain the spectrum of <TEX>$CF_4$</TEX> gas. In terms of the analysis of the spectra, trace CF radical by A-X and B-X transitions was detected. The other <TEX>$CF_x$</TEX> radicals, such as <TEX>$CF_2$</TEX> and <TEX>$CF_3$</TEX>, were not seen in this experiment whereas strong C and <TEX>$C_2$</TEX> emissions, dissociation products of <TEX>$CF_4$</TEX> gas, were observed.