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First-principles investigations for oxidation reaction processes at 4H-SiC/SiO2 interface and its orientation dependence

Materials ScienceEngineeringOxidation ResistanceSurface ScienceApplied PhysicsSiliceneCarbideSemiconductor Device Fabrication4H-sic/sio2 InterfaceOxidation ReactionSilicon On InsulatorOrientation Dependence