CdZnTe Energy Levels Induced by Doping of Indium

Abstract

Photoluminescence (PL) and infrared transmission spectra are used to characterize In-doped Cd0.9Zn0.1Te (CdZnTe:In). The PL spectrum reveals that there are two other strong emissions situated at 1.54 eV and 1.62 eV as well as the near band edge emission. This indicates that the doped In can lead to two donor levels of 0.12 eV and 0.04 eV in the CdZnTe band construction, respectively. The IR transmission spectra show that when the wavenumber is larger than 1000 cm−1, the CdZnTe:In was almost opaque to the IR emission. Then its IR transmission rapidly increases to 52% when the wavenumber is decreased to 350 cm−1 and then holds constant. This confirms the existence of the donor level of 0.12 eV.