Journal of Physics D Applied Physics · 2025 · 10 citations · 22 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsQuantum ConfinementQuantum WellsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsStrain EngineeringMolecular Beam EpitaxyPhotoluminescencePhotoluminescence SpectroscopyQuantum Confinement EffectsQuantum Well GrowthQuantum Well StructuresStrain EffectsStrained Quantum Wells
Abstract Germanium tin (GeSn) alloys have emerged as pivotal materials for advanced optoelectronic applications owing to their tunable bandgaps and compatibility with silicon-based technologies. In this study, high quality GeSn multiple quantum wells (MQWs) with Sn concentrations of 7.0 ± 0.5% and 7.7 ± 0.5% were successfully grown on Ge(001) substrates using molecular beam epitaxy (MBE). The pseudomorphic growth of the MQWs and the high crystalline quality is evidenced by high-resolution x-ray diffraction. Cross-sectional transmission electron microscopy confirms a low defect density at the interfaces between GeSn wells and Ge barriers. Atomic probe topography shows the consumption of Sn atoms in the Ge barrier layer, preventing Sn segregation through the MQW structure. Atomic force microscopy reveals a smooth surface free of Sn droplets. Photoluminescence spectroscopy demonstrates optical emission at different wavelengths for varying Sn composition and QW thickness, confirming quantum confinement effects. These findings highlight the potential of MBE to produce high-quality GeSn/Ge MQWs with minimal defects, offering significant contribution for the next generation of optoelectronic devices.
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Lasing in direct-bandgap GeSn alloy grown on Si
Stephan Wirths, Richard Geiger, Nils von den Driesch et al. · Nature Photonics · 2015 · 1.2K citations
Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
Seyed Amir Ghetmiri, Wei Du, Joe Margetis et al. · Applied Physics Letters · 2014 · 228 citations