Guo‐En Chang

Strain-Balanced ${\rm Ge}_{z}{\rm Sn}_{1-z}\hbox{--}{\rm Si}_{x}{\rm Ge}_{y}{\rm Sn}_{1-x-y}$ Multiple-Quantum-Well Lasers

Guo‐En Chang, Shu‐Wei Chang, Shun Lien Chuang · IEEE Journal of Quantum Electronics · 2010 · 202 citations

Engineering, Laser Science, Laser Applications +16

GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

H.‐H. Tseng, H. Li, V. I. Mashanov et al. · Applied Physics Letters · 2013 · 154 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +22

GeSn <i>p-i-n</i> waveguide photodetectors on silicon substrates

Yu‐Hsiang Peng, Hao Cheng, V. I. Mashanov et al. · Applied Physics Letters · 2014 · 98 citations

Gesn Detector, Photonics, Electrical Engineering +14

Sn-based waveguide p-i-n photodetector with strained GeSn/Ge multiple-quantum-well active layer

Yuhui Huang, Guo‐En Chang, Hui Li et al. · Optics Letters · 2017 · 95 citations

Design and Modeling of GeSn-Based Heterojunction Phototransistors for Communication Applications

Guo‐En Chang, Rikmantra Basu, Bratati Mukhopadhyay et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2016 · 94 citations

Optical Materials, Engineering, Optoelectronic Devices +17