ALD of Metal Fluorides–Potential Applications and Current State

Abstract

Abstract Metal fluoride thin films are important materials in a multitude of applications. Currently, they are mostly used in optics, but their potential in energy harvesting and storage is recognized as well. Atomic layer deposition (ALD) is an advanced thin film deposition method that has an ever‐increasing role in microelectronics. The assets of ALD are its capability to produce uniform, stoichiometric, and pure films with precise thickness control even on top of complicated structures, such as high aspect ratio trenches. These characteristics can be beneficial in applications of metal fluoride thin films but so far ALD of metal fluorides has remained much less studied and used than ALD of metal oxides, nitrides, sulfides, and pure metals. This review aims to motivate research on ALD of metal fluorides by surveying potential applications for ALD metal fluoride thin films and coatings. The basics of luminescent applications, antireflection coatings, and lithium‐ion batteries will be discussed. Next, the fundamentals of ALD will be presented followed by a comprehensive summary of the metal fluoride ALD processes published so far.