Numerical evaluation and optimization of high sensitivity Cu2CdSnSe4 photodetector

Abstract

Copper cadmium tin selenide (Cu 2 CdSnSe 4 ) based photodetector (PD) has been explored with the solar cell capacitance simulator (SCAPS-1D). Herein, cadmium sulfide (CdS) and molybdenum disulfide (MoS 2 ) are used as a window and back surface field (BSF) layers, respectively. The physical attributes, such as width, carrier density and bulk defects have been adjusted to attain the optimal conditions. In an optimized environment, the performance parameters of the Cu 2 CdSnSe 4 (CCTSe) PD e.g. open circuit voltage (V OC ), short circuit current (J SC ), responsivity, and detectivity are determined as 0.76 V, 45.57 mA/cm 2 , 0.72 A/W and 5.05 × 10 14 Jones, respectively without a BSF layer. After insertion of the BSF layer, the performance of the CCTSe PD is significantly upgraded because of the production of high built-in potential which rises the magnitude of V OC from 0.76 V to 0.84 V. For this reason, the responsivity and detectivity of CCTSe PD are also grows with the value of 0.84 A/W and 2.32 × 10 15 Jones, respectively that indicate its future potential.