Built-in Potential

Built-In Potential is the intrinsic electrostatic potential difference that develops across the depletion region of a p-n junction due to the diffusion of majority carriers, serving as the fundamental barrier that prevents further equilibrium diffusion in the absence of external bias.

389

Publications

23.3K

Citations

1.8K

Authors

510

Institutions

Publications per year

2017–2026

136

Variants

Built-in VoltageContact PotentialDiffusion Potential

Authors

1.8K

  1. TY
    Tsuyoshi Yoshitake

    Kyushu University, Japan

    6 publications · 174 citations

    6

    h-index

  2. CJ
    Chun‐Sheng Jiang

    National Laboratory of the Rockies, United States

    6 publications · 608 citations

    6

    h-index

  3. FC
    Franco Cacialli

    University College London, United Kingdom

    5 publications · 365 citations

    5

    h-index

  4. HM
    Helio Moutinho

    National Laboratory of the Rockies, United States

    5 publications · 556 citations

    5

    h-index

  5. TM
    Thomas M. Brown

    University of Rome Tor Vergata, Italy

    5 publications · 365 citations

    5

    h-index

1–5 of 1.8K

Venues

  1. Applied Physics Letters

    63 publications · 3.6K citations

    32

    h-index

  2. ACS Applied Materials & Interfaces

    24 publications · 1.3K citations

    22

    h-index

  3. Journal of Applied Physics

    38 publications · 1.7K citations

    22

    h-index

  4. Japanese Journal of Applied Physics

    JJAP · 13 publications · 369 citations

    12

    h-index

  5. IEEE Transactions on Electron Devices

    9 publications · 358 citations

    10

    h-index

1–5