CMOS‐compatible, AlScN‐based integrated electro‐optic phase shifter

Abstract

Abstract Commercial production of integrated photonic devices is limited by scalability of desirable material platforms. We explore a relatively new photonic material, AlScN, for its use in electro‐optic phase shifting and modulation. Its CMOS‐compatibility could facilitate large‐scale production of integrated photonic modulators, and it exhibits an enhanced second‐order optical nonlinearity compared to intrinsic AlN, indicating the possibility for efficient modulation. Here, we measure the electro‐optic effect in Al 0.80 Sc 0.20 N‐based phase shifters. We utilized the TM0 mode, allowing use of the r 33 electro‐optic coefficient, and demonstrated V π L around 750 V cm. Since the electro‐optic response is smaller than expected, we discuss potential causes for the reduced response and future outlook for AlScN‐based photonics.