Modeling of Ferroelectric Thin Film Transistors with Amorphous Oxide Semiconductor Channel

Abstract

A physics-based model for ferroelectric thin film transistors with amorphous oxide semiconductor channel (OS-FeTFTs) is proposed to investigate the subthreshold swing (SS) variation phenomenon. The polarization switching (PS) mechanism and memory window (MW) variation are also investigated to gain insights into device physics in OS-FeTFTs. In particular, complete reversal of polarization is crucial in maintaining a large MW. Finally, the concept of switching point is introduced, which guides the design of the write operation for OS-FeTFTs to avoid PS failure (PSF).