1c:I[419806,["/_next/static/chunks/bb923814e1f4d2e9.js","/_next/static/chunks/dd3ee9f5b7716ca6.js","/_next/static/chunks/4204a0ae82542ca8.js","/_next/static/chunks/30036bedc5269936.js","/_next/static/chunks/6e1aa89a642f40be.js","/_next/static/chunks/cd5e572bc3e4eb92.js","/_next/static/chunks/8ffd0b71567920d8.js","/_next/static/chunks/67ea6dfd21f16c5f.js","/_next/static/chunks/24eb4379f68013fd.js","/_next/static/chunks/b8cd775ffdf935bd.js","/_next/static/chunks/983103cd9eb7b428.js","/_next/static/chunks/d4ac9dcf27f6ff52.js","/_next/static/chunks/294b9525248c8e5f.js"],"default"] 1d:T525,The operation of the ferroelectric nonvolatile memory field effect transistor is theoretically examined extensively for the first time. The ferroelectric transistor device properties are derived by combining the silicon charge-sheet model of metal-oxide-semiconductor field-effect transistor device operation with Maxwell’s first equation which describes the properties of the ferroelectric film. The model we present describes ferroelectric transistor I-V and C-V behavior when time-dependent voltages are applied which result in hysteresis due to ferroelectric switching. The theoretical results provide unique insight into the effects of geometrical and material parameters on the electrical properties of the transistor. These parameters include the ferroelectric spontaneous and remanent polarization, the coercive field, and dielectric layer thicknesses. We have found that the conventional concept of threshold voltage is no longer useful, and that increasing the spontaneous polarization has only a minor impact on memory operation due to reverse dipole switching of the ferroelectric layer. The application of the model to optimize design and fabrication parameters is illustrated with a virtual prototyping example. The model is also used to develop a practical testing methodology for this unique device.1e:T4f0,Ferroelectric field effect transistors (FeFETs) based on ferroelectric hafnium oxide (HfO ₂ ) thin films show high potential for future embedded nonvolatile memory applications. However, HfO ₂ films besides their recently discovered ferroelectric behavior are also prone to undesired charge trapping effects. Therefore, the scope of this paper is to verify the possibility of the charge trapping during standard operation of the HfO ₂ -based FeFET memories. The kinetics of the charge trapping and its interplay with the ferroelectric polarization switching are analyzed in detail using the single-pulse I _D -V _G technique. Furthermore, the impact of the charge trapping on the important memory characteristics such as retention and endurance is investigated.1f:T49c,Memory devices with high speed and high density are highly desired to address the 'memory wall' issue. Here we demonstrated a highly scalable, three-dimensional stackable ferroelectric diode, with its rectifying polarity modulated by the polarization reversal of Hf_0.5Zr_0.5O₂ films. By visualizing the hafnium/zirconium lattice order and oxygen lattice order with atomic-resolution spherical aberration-corrected STEM, we revealed the correlation between the spontaneous polarization of Hf_0.5Zr_0.5O₂ film and the displacement of oxygen atom, thus unambiguously identified the non-centrosymmetric Pca2₁ orthorhombic phase in Hf_0.5Zr_0.5O₂ film. We further implemented this ferroelectric diode in an 8 layers 3D array. Operation speed as high as 20 ns and robust endurance of more than 10⁹

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