Selective Data Writing in IrMn-Based Perpendicular Magnetic Tunnel Junction Array Through Voltage-Gated Spin-Orbit Torque

Abstract

The interplay of spin-orbit torque (SOT) and voltage-controlled magnetic anisotropy (VCMA) has great potential to be the next-generation writing method for low-power, fast-speed, and high-density memory applications. In this letter, we first experimentally demonstrate field-free voltage-gated SOT switching in IrMn-based perpendicular magnetic tunnel junctions (MTJs) with a diameter of 80 nm. Then we fabricate a memory array that integrates multiple MTJs on a shared IrMn strip. When a gate voltage of 0.8 V is applied to an MTJ in the array, the SOT critical current density decreases by 70%, resulting in a substantial 91% reduction in total power consumption. Through this voltage-gated SOT switching, selective data writing in the MTJ array is accomplished. Moreover, the endurance of more than <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${1} \times {10} ^{{12}}$ </tex-math></inline-formula> and the write error rate below <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${8} \times {10} ^{-{5}}$ </tex-math></inline-formula> are achieved. These findings demonstrate the high performance of voltage-gated SOT devices and contribute to its practical application in magnetic random-access memory.