1987 · 11 citations · 0 references
Temperature dependence of the sidegatlng effect of GaAs MESFETs was investigated. It was confirmed that the sidegating effect was dominated by two factors; the probability of electrons to reach the depletion region beneath channel, and the capture and emittion rate of deep levels in that region. At low temperature, anomalous sidegating effect was observed, which was not simply eliminated by increasing the distance between an FET and a sidegate. Insertion of negatively biased p-type region formed between them was found to be very effective to suppress the sidegating effect, even at low temperature.