Diffusion Control on the Van der Waals Surface of Monolayers for Uniform Bi‐Layer MoS₂ Growth

Abstract

Abstract 2D MoS 2 has gained attention for the post‐silicon material owing to its atomically thin nature and dangling bond‐free surface. The bi‐layer MoS 2 is considered a promising material for electronic devices due to its better electrical properties than monolayer MoS 2 . However, the uniform growth of bi‐layer MoS 2 is still challenging. Herein, the uniform growth of bi‐layer MoS 2 is demonstrated using gas‐phase alkali metal‐assisted metal–organic chemical vapor deposition (GAA‐MOCVD). Thanks to enhanced metal reactant diffusion length in GAA‐MOCVD, the uniform growth of bi‐layer MoS 2 film is achieved even at fast nucleation kinetics for a shorter growth time compared to previously reported MOCVD. The bi‐layer MoS 2 field‐effect transistors (FETs) show superior electrical properties such as sheet conductance and electron mobility than monolayer MoS 2 FETs. The electron mobility of bi‐layer MoS 2 FETs with bismuth contacts reaches a maximum of 92.35 cm 2 V −1 s −1 . Using the partially grown epitaxial bi‐layer (PGEB) MoS 2 , it is demonstrated that a photodetector showed a near‐infrared photoresponse with a low dark current that is advantageous for both monolayer and bi‐layer applications. The potential expansion of the growth technique to layer‐by‐layer growth can result in boosted performance across a wide spectrum of electronic and optoelectronic devices employing MoS 2 .