High RA Dual-MTJ SOT-MRAM devices for High Speed (10ns) Compute-in-Memory Applications

Abstract

The rapid development of artificial intelligence in recent decades has been continuously driving new software and hardware advancements. High-dimensional matrix-vector multiplication (MVM) is a crucial component in signal processing and machine learning computations. To achieve MVM, the 2D crossbar array of memristors has been widely discussed and studied. In this work, a novel SOT-MRAM device structure with 10ns write speed and >100x scalable resistance and read current are demonstrated to address the persistent problems of the traditional 2D crossbar array, leveraging its read-write path separation nature.