EngineeringMaterials SciencePhysicsElectronic MaterialsOptoelectronicsSemiconductor MaterialsNanoelectronicsNanostructured Electronic MaterialsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsStrain EngineeringBand AlignmentHeterostructuresNanoscale HeterostructuresOptoelectronic PropertiesStrain EffectsStrain Effects On Electronic PropertiesTwo-dimensional Semiconductor HeterostructuresVan Der Waals Heterostructures
The physical mechanism of manipulating the arsenene/MoSi 2 N 4 heterostructure via applying in-plane/vertical strain and electric field to achieve nanoelectronic and optoelectronic applications is explored.
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Generalized Gradient Approximation Made Simple
John P. Perdew, Kieron Burke, Matthias Ernzerhof · Physical Review Letters · 1996 · 211.5K citations · Full text
Natural Sciences, Chemistry, Physics +16
Electric Field Effect in Atomically Thin Carbon Films
Kostya S. Novoselov, A. K. Geǐm, Da Jiang et al. · Science · 2004 · 66.1K citations · Full text