Ultra-violet and yellow-green emissions under intriguing bidirectional DC driving based on Au/i-Ga₂O₃/n-GaN MIS heterojunction light-emitting diodes

Abstract

The low lattice mismatch between β-Ga 2 O 3 and GaN alleviates interface defects and improves device performance, and the EL spectra of Ga 2 O 3 /GaN heterojunction devices emit ultra-violet and yellow-green light at forward and reverse bias.