Ferroelectric Field-Effect Transistor Synaptic Device With Hafnium-Silicate Interlayer

Abstract

A ferroelectric field-effect-transistor (FeFET) with hafnium zirconium oxide ferroelectric layer and hafnium silicate (HfSiOx) interlayer (IL) is demonstrated. Compared to a FeFET with SiO2 IL, the proposed FeFET is confirmed to have faster program/erase operations, wider memory window, and the improved endurance/retention characteristics due to the higher dielectric constant of HfSiOx and superior interfacial state between HfxZr(1-x)O2 and IL. The proposed FeFET demonstrates a power spectral density that is approximately two times smaller than that of conventional FeFETs and endurance exceeding 1010 cycles. This underscores its enhanced suitability for neuromorphic computing applications.