Recent Advances in Photodetectors Based on Two-Dimensional Material/Si Heterojunctions

Abstract

Two-dimensional (2D) materials have gained significant attention owing to their exceptional electronic and optoelectronic properties, including high carrier mobility, strong light–matter interaction, layer-dependent band structure and band gap. The passivated surface of 2D materials enables the fabrication of van der Waals (vdW) heterojunctions by integrating them with various other materials, such as nanowires, nanosheets and bulk materials. Heterojunction photodetectors, specifically those composed of 2D materials and silicon (Si), have attracted considerable interest due to the well-established processing techniques associated with Si and the excellent performance of the related devices. The hybrid dimension vdW heterojunction composed of 2D materials and Si has the advantages of excellent performance, low fabrication cost, and easy integration with silicon-based devices. It has unique advantages in the field of heterojunction photodetectors. This review provides an overview of the recent advancements in photodetectors based on 2D material/Si heterojunctions. First, we present the background and motivation of the review. Next, we discuss the key performance metrics for evaluating photodetector performance. Then, we review the recent progress made in the field of 2D material/Si heterojunction photodetectors. Finally, we summarize the findings and offer future prospects.