Thermal Induced P_r Degradation Under Low-Voltage Operation in HfZrO Ferroelectric Film: Phenomenon and Underlying Mechanism

Abstract

To promote the practical application of ferroelectric devices, we present a systematical study on ferroelectric properties of 10nm HZO capacitor at the high temperature application scenarios (300K-400K). We found that the Pr value decreases with the increase of temperature (thermal induced Pr degradation, TIPD) and this phenomenon mainly occurs in the case of low electric field operation. By using in-situ material characterization, it is proved that this phenomenon is not caused by phase transition. Further research on trap generation and redistribution through electrical characterization reveals that TIPD is related to the internal electric field ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{E}_{\text {bias}}{)}$ </tex-math></inline-formula> caused by charge de-trapping. The deep insight into the underlying mechanism of TIPD provides a useful perception for advancing the practical application of ferroelectric devices.