Ferroelectric synaptic devices based on CMOS-compatible HfAlO_<i>x</i>for neuromorphic and reservoir computing applications

Abstract

) is obtained. Furthermore, we show that paired-pulse facilitation, paired-pulse depression, and spike-timing-dependent plasticity can be utilized in HAO-based FTJs. In addition, this study demonstrates the use of an FTJ device as a physical reservoir to implement reservoir computing. Through a series of processes, the synaptic properties of FTJs are verified for the feasibility of their implementation as an artificial synaptic device.