21:I[432972,["/_next/static/chunks/bb923814e1f4d2e9.js","/_next/static/chunks/dd3ee9f5b7716ca6.js","/_next/static/chunks/4204a0ae82542ca8.js","/_next/static/chunks/1270dead247da766.js","/_next/static/chunks/6e1aa89a642f40be.js","/_next/static/chunks/2d7aa753e81324a8.js","/_next/static/chunks/8ffd0b71567920d8.js","/_next/static/chunks/67ea6dfd21f16c5f.js","/_next/static/chunks/24eb4379f68013fd.js","/_next/static/chunks/b8cd775ffdf935bd.js","/_next/static/chunks/983103cd9eb7b428.js","/_next/static/chunks/263f2cdcb9aa2341.js","/_next/static/chunks/294b9525248c8e5f.js"],"default"] 22:T531,The hafnium oxide-based ferroelectric tunnel junction (FTJ) has been actively researched because of desirable advantages such as low power and CMOS compatibility to operate as a memristor. In the case of HfAlO_x (HAO), the remanent polarization (P_r) value is high and the atomic radius of Al is smaller than that of Hf; therefore, ferroelectricity can be better induced without mechanical force. In this paper, we propose an FTJ using HAO as a ferroelectric layer through electrical analysis and experiments; further, we experimentally demonstrate its capability as a synaptic device. Moreover, we evaluate the maximum 2P_r and TER value of the device according to the difference in conditions of thickness and cell area. The optimized device conditions are analyzed, and a large value of 2P_r (>∼43 μC cm^-2) is obtained. Furthermore, we show that paired-pulse facilitation, paired-pulse depression, and spike-timing-dependent plasticity can be utilized in HAO-based FTJs. In addition, this study demonstrates the use of an FTJ device as a physical reservoir to implement reservoir computing. Through a series of processes, the synaptic properties of FTJs are verified for the feasibility of their implementation as an artificial synaptic device.23:T4ba,Here, we have identified the volatile and non-volatile traits of Pt/TaOx/TiN device through the various electrical experiments by controlling the compliance current (CC) and determined the availability of this device as a memristor. First of all, the configuration analysis is performed to ensure the structure and thickness of the device. We monitored the volatile resistive switching, which can be facilitated as short-term memory (STM) at a low current level. But in the higher CC, the forming process at the negative bias needs to be accompanied and shows the bipolar resistive switching (BRS), which can be used as non-volatile memory (NVM) within the neuromorphic system. Also, we investigated the conduction mechanism and proved that Space-Charge-Limited-Current (SCLC) dominates the high resistive state in the reset mechanism. The distinct difference between volatile and non-volatile characteristics that appear depending on the CC is shown in the retention test. Finally, we conducted the pattern recognition of the Modified National Institute of Standards and Technology (MNIST) and obtained two pattern recognition accuracy using the potentiation/depression data measured from different BRS types.

#	Concept	H-Index	Publications	Citations
1	Engineering	2	2	56
2	Electrical Engineering	2	2	56
3	Medicine	1	1	42
4	Applied Physics	1	1	14
5	Chemical Engineering	1	1	14

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