Optimizing Post-Metal Annealing Temperature Considering Different Resistive Switching Mechanisms in Ferroelectric Tunnel Junction

Abstract

We investigate the effect of post-metal annealing temperature ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}_{\text {PMA}}$ </tex-math></inline-formula> ) on ferroelectric (FE) resistive switching (RS) and non-FE RS in HfOx ferroelectric tunnel junctions. Through conductance analysis and low-frequency noise spectroscopy, the effects of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}_{\text {PMA}}$ </tex-math></inline-formula> on RS mechanisms are demonstrated. It is revealed that the non-FE RS, redistribution of oxygen vacancies, is suppressed with an increase in <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}_{\text {PMA}}$ </tex-math></inline-formula> . The effects of different RS mechanisms on the tunneling electroresistance and cycling endurance characteristics are systematically investigated.