Extending Plasmonic Enhancement Limit with Blocked Electron Tunneling by Monolayer Hexagonal Boron Nitride

Abstract

Fabricating ultrasmall nanogaps for significant electromagnetic enhancement is a long-standing goal of surface-enhanced Raman scattering (SERS) research. However, such electromagnetic enhancement is limited by quantum plasmonics as the gap size decreases below the quantum tunneling regime. Here, hexagonal boron nitride (h-BN) is sandwiched as a gap spacer in a nanoparticle-on-mirror (NPoM) structure, effectively blocking electron tunneling. Layer-dependent scattering spectra and theoretical modeling confirm that the electron tunneling effect is screened by monolayer h-BN in a nanocavity. The layer-dependent SERS enhancement factor of h-BN in the NPoM system monotonically increases as the number of layers decreases, which agrees with the prediction by the classical electromagnetic model but not the quantum-corrected model. The ultimate plasmonic enhancement limits are extended in the classical framework in a single-atom-layer gap. These results provide deep insights into the quantum mechanical effects in plasmonic systems, enabling the potential novel applications based on quantum plasmonic.