IEEE Electron Device Letters · 2022 · 11 citations · 26 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsElectronic MaterialsSemiconductor DevicesDielectricsFerroelectric MaterialsMetal-oxide-semiconductor Field-effect TransistorsNanowiresSemiconductor Device MaterialsSemiconductor PhysicsDielectric ConstantFerroelectric Field-effect TransistorsGate DielectricsGate Stack EngineeringNanowire Field-effect TransistorsNanowire TransistorsSemiconductor Nanowires
The HfxZryO2 with high Zr content is demonstrated to form the anti-ferroelectric tetragonal phase (AFE t-phase). The peak dielectric constant (47) of Hf0.2Zr0.8O2 is achieved. By taking advantage of the high dielectric constant, the Hf0.2Zr0.8O2 is used in the gate stack on the high mobility Ge0.98Si0.02 channel to significantly enhance the drive current. Stacked two Ge0.98Si0.02 gate-all-around nanowires can have high ION per perimeter of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$740~\mu \text{A}/\mu $ </tex-math></inline-formula> m at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mathrm{V}_{\mathrm{OV}}= \mathrm{V}_{\mathrm{DS}}= 0.5\text{V}$ </tex-math></inline-formula> . The thermal budget is as low as 450 °C.
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Ferroelectricity in Simple Binary ZrO<sub>2</sub> and HfO<sub>2</sub>
Johannes Müller, T. S. Böscke, U. Schröder et al. · Nano Letters · 2012 · 1.7K citations