IEEE Journal of Solid-State Circuits · 2022 · 13 citations · 21 references
EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsSemiconductor DevicesCmos Circuit DesignDetector TechnologyMixed-signal Integrated Circuit DesignPower AmplifiersRadio-frequency Integrated CircuitsWireless Power TransferAnalog-to-digital ConvertersCmos Analog Integrated CircuitsPower Added EfficiencyPower OutputRadio Frequency Power AmplifiersSiliconSilicon-on-insulator CmosTransmitter Front-ends
A fifth-generation (5G) frequency range 2 (FR2) transmitter front end with a fully integrated power detector for enabling closed-loop power control is presented. The power detection path includes a miniature broad-side directional coupler, a sense pair, and a current-mode successive approximation analog-to-digital converter. The stacked power amplifier (PA) implemented in a 28-nm CMOS silicon on insulator (SOI) process delivers 12.5-dBm output power with a power-added efficiency of 10% and an error vector magnitude (EVM) lower than −25 dB with a CP-OFDM/64-QAM/400-MHz bandwidth signal. The PA supports 5G frequency bands n257/n258/n261 covering a frequency range from 24.25 to 29.5 GHz. With a matched output load, the power detector has less than ±0.15-dB error over a 15-dB power dynamic range and 85° temperature range.
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C.H. Doan, Sohrab Emami, Ali M. Niknejad et al. · IEEE Journal of Solid-State Circuits · 2005 · 710 citations
Hong-Teuk Kim, Byoung-Sun Park, Seong-Sik Song et al. · IEEE Journal of Solid-State Circuits · 2018 · 241 citations
Engineering, Computer Engineering, Electrical Engineering +17