Concepedia

Publication | Closed Access

Boosting the Memory Window of the BEOL-Compatible MFMIS Ferroelectric/ Anti-Ferroelectric FETs by Charge Injection

DOI

27

Citations

0

References

2022

Year

Zijie Zheng, Chen Sun, Leming Jiao, Dong Zhang, Zuopu Zhou, Xiaolin Wang, Gan Liu, Qiwen Kong, Yue Chen, Kai Ni,
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Abstract

By careful design of the area ratio (AR) of the BEOL-compatible MFMIS Fe/AFe-FET, we modulate the charge injection in the gate stack and successfully push the memory window (MW) of Fe-FET to ~8 V, far beyond the theoretical limit. As for AFe-FET, MW up to ~3 V further confirms the influence of the charging effect. While decent endurance of Fe-FETs with very large MW is obtained, the AFe-FETs with non-volatile characteristics hold great promise for ultra-high endurance operation. To take full advantage of these properties, we propose a scaling strategy implementing a channel-all-around (CAA) vertical device with the MFMIS structure, which is proved to have intrinsic large AR through simulation. At last, a novel image encryption application with outstanding area and energy efficiency is demonstrated thanks to the proposed high-density integration method and the multistate features of Fe-FETs.